About this course: PLEASE NOTE: This version of the course has been formed from an earlier version, which was actively run by the instructor and his teaching assistants. Some of what is mentioned in the video lectures and the accompanying material regarding logistics, book availability and method of grading may no longer be relevant to the present version. Neither the instructor nor the original teaching assistants are running this version of the course. There will be no certificate offered for this course. Learn how MOS transistors work, and how to model them. The understanding provided in this course is essential not only for device modelers, but also for designers of high-performance circuits.
Created by: Columbia University
Taught by: Yannis Tsividis, Charles Batchelor Professor of Electrical Engineering
Fu Foundation School of Engineering and Applied Science
| Commitment | 8-10 hours/week |
| Language | English |
| How To Pass | Pass all graded assignments to complete the course. |
| User Ratings |
Syllabus
WEEK 1
About This Course and Overview of the MOS Transistor
Welcome to the “MOS Transistors” course! We are very excited to be able to offer this course, and are looking forward to working with you.
2 videos, 1 reading
- Reading: Read First: Course Information
- Video: About This Course
- Video: Intuitive Overview of the MOS Transistor
Preliminaries and Background
10 videos
- Video: CMOS Processes
- Video: Semiconductors - Part 1
- Video: Semiconductors - Part 2
- Video: Semiconductors - Part 3
- Video: Conduction – Part 1
- Video: Conduction – Part 2
- Video: Contact Potentials
- Video: pn Junctions – Zero and Forward Bias
- Video: pn Junctions –Under Reverse Bias – Part 1
- Video: pn Junctions –Under Reverse Bias – Part 2
Graded: Problem Set 1
WEEK 2
The Two-Terminal and Three-Terminal MOS Structures
9 videos
- Video: The Two-Terminal MOS Structure – Flatband Voltage
- Video: The Two-Terminal MOS Structure – Surface Condition
- Video: The Two-Terminal MOS Structure – General Analysis
- Video: The Two-Terminal MOS Structure – Inversion
- Video: The Two-Terminal MOS Structure – Strong Inversion
- Video: The Two-Terminal MOS Structure – Weak Inversion
- Video: The Two-Terminal MOS Structure – Small-Signal Capacitance
- Video: The Three-Terminal MOS Structure – Part 1
- Video: The Three-Terminal MOS Structure – Part 2
Graded: Problem Set 2
WEEK 3
The Long-Channel MOS Transistor – Part 1
This is the first module we are dealing with the complete transistor; much of this material, as well as next module's material, will form the core of what we will be covering in the rest of the course. We hope you will spend extra time studying to make sure you understand this material in depth. The total viewing time in each of these two modules is shorter, which should help.
5 videos
- Video: Introduction
- Video: Complete All-Region Model
- Video: Simplified All-Region Models
- Video: Strong Inversion Models – 1
- Video: Strong Inversion Models – 2
WEEK 4
The Long-Channel MOS Transistor – Part 2
This material concludes the lectures on the long-channel transistor in DC operation. As mentioned earlier, these lectures will form the core on which many of our subsequent discussions will be based.
5 videos
- Video: Strong Inversion Models
- Video: Weak Inversion Models
- Video: Source Reference vs. Body Reference
- Video: Effective Mobility
- Video: Additional Topics
Graded: Problem Set 3
WEEK 5
Small-Dimension Effects 1
In this module we are dealing with phenomena that occur when the transistor dimensions are made small; this is important knowledge to have when one is dealing with modern devices.
8 videos
- Video: Small-Dimension Effects - Velocity Saturation
- Video: Small-Dimension Effects – Channel Length Modulation
- Video: Small-Dimension Effects - Charge Sharing
- Video: Small-Dimension Effects – Drain-Induced Barrier Lowering
- Video: Small-Dimension Effects – Combining Several Effects Into One Model
- Video: Small-Dimension Effects – Hot Carrier Effects
- Video: Small-Dimension Effects - Velocity Overshoot and Ballistic Operation
- Video: Small-Dimension Effects - Polysilicon Depletion
Graded: Midterm
WEEK 6
Small-Dimension Effects 2; Modeling for Circuits Simulation
This module we will finish with small dimension effects, and then talk about models for circuit simulation (the circuit designers among you are probably already using such models). We discuss what it takes to make a good model for circuit simulation (among other things: a lot of caution and care, and about 20,000 lines of code!), and how you can spot possible problems with such models. Although models for circuit simulation include capabilities we have not yet discussed, such as charge modeling, we think you know enough about models at this point to be able to follow this general discussion (which is out of sequence – it’s from Chap. 10 in the book, where you can find much more on the subject).
9 videos
- Video: Small-Dimension Effects - Quantum-Mechanical Effects; Gate Current
- Video: Small-Dimension Effects – Junction Leakage
- Video: Small-Dimension Effects - Scaling and New Technologies
- Video: Modeling for Circuit Simulation – Approaches and Properties of Good Models
- Video: Modeling for Circuit Simulation – Model Formulation Considerations
- Video: Modeling for Circuit Simulation – Parameter Extraction 1
- Video: Modeling for Circuit Simulation – Parameter Extraction 2
- Video: Modeling for Circuit Simulation – Representative Compact Models
- Video: Modeling for Circuit Simulation – Benchmark Tests
WEEK 7
Large-Signal Dynamic Operation
In this module there is a significant departure from what we have done up to this point: we will allow the terminal voltages of the transistor to vary with time. We will determine the resulting terminal currents, which will now include a “charging” component. We will do this both for moderate and for very high “speeds”. The transient response of circuits involves similar calculations, only done by computer for an ensemble of transistors and other devices.
8 videos
- Video: Large-Signal Dynamic Operation – Quasi-Static Operation
- Video: Large-Signal Dynamic Operation – Terminal Currents in QS Operation
- Video: Large-Signal Dynamic Operation – Charging Currents in QS Operation
- Video: Large-Signal Dynamic Operation – Evaluation of Charges
- Video: Large-Signal Dynamic Operation – Transit Time
- Video: Large-Signal Dynamic Operation – Transient Response Using QS Modeling
- Video: Large-Signal Dynamic Operation – Non-Quasi-Static Operation
- Video: Large-Signal Dynamic Operation – Extrinsic Parasitics
WEEK 8
Small-Signal Modeling I
The material for this module deals with small-signal modeling, and constitutes an important part of the description of MOS transistor behavior. It relates small changes in terminal voltages to the resulting small changes in currents. Small-signal modeling is key to analog circuit design, but not only; it is also used in high-performance digital circuit design (e.g., in designing memory sense amplifiers).
6 videos
- Video: Small-Signal Modeling – Conductance Parameter Definitions and Equivalent Circuits
- Video: Small-Signal Modeling – Conductance Parameters Due to Gate and Body Leakage
- Video: Small-Signal Modeling –Transconductance
- Video: Small-Signal Modeling – Source-Drain and Output Conductance
- Video: Small-Signal Modeling – Capacitance Definitions and Equivalent Circuits
- Video: Small-Signal Modeling – Capacitance Evaluation and Properties
WEEK 9
Small-Signal Modeling II
This material concludes our discussion of small-signal modeling; it shows how we can model the transistor at frequencies at which the simple model we derived last week is not valid. Such modeling is important in high-frequency applications, e.g. transceiver design.
6 videos, 1 reading
- Video: Small-Signal Modeling – Complete Capacitance Parameter Set
- Video: Small-Signal Modeling – Complete Quasi-Static Model
- Video: Small-Signal Modeling – y-Parameter Model
- Video: Small-Signal Modeling – Non-Quasi-Static Model
- Video: Small-Signal Modeling – Model Comparison
- Video: Small-Signal Modeling – RF Models
- Reading: Problem Set 9 Preamble
Graded: Problem Set 4
WEEK 10
Final Exam
The exam is open book, open notes, open videos. It covers the material of the first nine weeks of videos in the course. You are NOT allowed to discuss the exam, directly or indirectly, with anyone. Anybody found in violation of this rule will be removed from the course. You should, of course, feel free to report technical issues with the exam and its submission.
Graded: Final Exam
WEEK 11
End of Course
Although your knowledge of this material will not be tested in the final exam, we urge you to go through it, as it deals with important topics, namely noise, ion implantation and substrate nonuniformity, and statistical variability; these topics will help complete your understanding of MOS transistors.
10 videos
- Video: Noise - Introduction
- Video: Noise - Thermal Noise
- Video: Noise - High-Frequency Considerations
- Video: Noise - Flicker Noise
- Video: Ion Implantation – Threshold Adjust Implant
- Video: Halo Implants
- Video: Well Proximity Effect
- Video: Stress Effects
- Video: Statistical Variability
- Video: Epilogue
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Ratings and Reviews
VERY HELPFUL
I come from electrical engineering background. I found the material in the course very insightful and easy to follow.
This is the best lecture avaliable on internet. The whole lecture are well designed and and explained. Sir please provide lectures on analog circuit design concept.
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RS
Extremely useful and well planned course! Must for every analog circuit designer...