University of Colorado Boulder
Transistor - Field Effect Transistor and Bipolar Junction Transistor
University of Colorado Boulder

Transistor - Field Effect Transistor and Bipolar Junction Transistor

This course is part of Semiconductor Devices Specialization

Taught in English

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Wounjhang Park

Instructor: Wounjhang Park

11,690 already enrolled

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Course

Gain insight into a topic and learn the fundamentals

4.2

(73 reviews)

Advanced level
Designed for those already in the industry
12 hours (approximately)
Flexible schedule
Learn at your own pace
Progress towards a degree

What you'll learn

  • Describe and analyze metal-oxide-semiconductor (MOS) device

  • Describe and analyze MOS field effect transistor (MOSFET)

  • Describe and analyze bipolar junction transistor (BJT)

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Assessments

3 quizzes

Course

Gain insight into a topic and learn the fundamentals

4.2

(73 reviews)

Advanced level
Designed for those already in the industry
12 hours (approximately)
Flexible schedule
Learn at your own pace
Progress towards a degree

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This course is part of the Semiconductor Devices Specialization
When you enroll in this course, you'll also be enrolled in this Specialization.
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  • Gain a foundational understanding of a subject or tool
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There are 3 modules in this course

In this module on MOS devices, we will cover the following topics:, MOS device structure, energy band diagram for MOS device at equilibrium, Flat band condition, Accumulation, Depletion, and Inversion of MOS under bias, Energy band diagram and charge distribution for MOS in inversion, Quantitative model and relevant parameters, Energy band diagram with channel bias, Inversion layer charge, and Effect on threshold voltage of MOS in non-equilibrium, C-V characteristics: Charge distribution under different biasing conditions, C-V characteristics: Frequency dependence, Effects of oxide charge on flat band and threshold voltages in non-ideal MOS, and Types of oxide charge in non-ideal MOS.

What's included

8 videos4 readings1 quiz1 discussion prompt

In this module on MOSFETs (metal-oxide semiconductor field effect transistors), we cover the following topics: History of development of MOSFETs, Device structure, Device types, Circuit symbols, Long channel theory, I-V characteristics, Modes of operation, Channel length modulation, Body bias effect, Bulk charge effect, Sub-threshold conduction, Source/drain charge sharing in short channel devices, Drain induced barrier lowering, Subsurface punchthrough, Mobility degradation, Velocity saturation, Drain current saturation, Scaling of drain current with channel length, and Scaling of speed with channel length.

What's included

7 videos3 readings1 quiz

In this module on BJTs (bipolar junction transistors), we will cover the following topics: BJT Device structures, Energy band diagrams, Active bias, Leakage current, Recombination in base, Hoe injection, Non-uniform doping in base, Current gain, Switching with BJT, Single heterojunction bipolar transistor, Double heterojunction bipolar transistor, Non-uniform material, Early effect, Emitter bias dependence, High-level injection, Base, emitter and collector transit times, and RC time constant.

What's included

6 videos3 readings1 quiz1 peer review

Instructor

Instructor ratings
4.5 (9 ratings)
Wounjhang Park
University of Colorado Boulder
6 Courses47,752 learners

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Recommended if you're interested in Electrical Engineering

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