University of Colorado Boulder
High Voltage Schottky and p-n Diodes
University of Colorado Boulder

High Voltage Schottky and p-n Diodes

Course

Gain insight into a topic and learn the fundamentals

Bart Van Zeghbroeck

Instructor: Bart Van Zeghbroeck

Intermediate level

Recommended experience

19 hours to complete
3 weeks at 6 hours a week
Flexible schedule
Learn at your own pace
Progress towards a degree

What you'll learn

  • ·      Gain a detailed understanding of Schottky and p-n diodes.

    ·      Calculate key diode parameters based on their physical structure.

Details to know

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Assessments

19 quizzes

Taught in English

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There are 4 modules in this course

In this module, you will learn about semiconductors: the material used to make power semiconductor devices. Specifically you will learn: a) types of semiconductors that are of interest and their crystal structure, b) band structure of relevant semiconductors, c) How to calculate the majority and minority carrier density in a semiconductor, d) How to deal with electron and hole drift and diffusion, and e) How to deal with carrier generation and recombination. This module closes with the drift-diffusion model, the cornerstone of any semiconductor device analysis.

What's included

6 videos15 readings6 quizzes

In this module, you will learn about the simplest semiconductor device, a Schottky diode, which consists of a metal-semiconductor junction. You will apply the drift-diffusion model, solving Gauss' law leading to the depletion layer width, the maximum electric field and capacitance versus voltage relation. Next is the derivation of the Schottky diode current. The analysis of diode breakdown at high voltage is included as well, as is the construction of a SPICE model including parasitic elements.

What's included

5 videos14 readings5 quizzes

In this module, you will learn how to analyze a p-n diode and how it differs from a Schottky diode. Specific items of interest are: a) The capacitance versus voltage relation, b) The diode current, including minority carrier injection under forward bias, c) The minority carrier charge and its effect on switching losses, and d) The construction of a p-n diode SPICE model including parasitic circuit elements.

What's included

5 videos14 readings5 quizzes

In this module, you will learn about the trade-off between diode losses and breakdown voltage including: a) The diode resistance and its relation to the breakdown voltage, b) The switching losses and relation to diode capacitance and minority charge storage, and c) A detailed comparison of SiC Schottky and silicon p-n diodes.

What's included

3 videos7 readings3 quizzes

Instructor

Bart Van Zeghbroeck
University of Colorado Boulder
2 Courses2,343 learners

Offered by

Recommended if you're interested in Electrical Engineering

Get a head start on your degree

This course is part of the following degree programs offered by University of Colorado Boulder. If you are admitted and enroll, your coursework can count toward your degree learning and your progress can transfer with you.

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